PART |
Description |
Maker |
APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP Advanced Power Technology
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT25GP120BDQ1 APT25GP120BDQ1G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT65GP60JDQ2 |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|
APT15GP90BDQ1G APT15GP90BDQ1 |
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
APT13GP120BDQ1 APT13GP120BDQ1G |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT80GP60JDQ3 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT75GP120JDQ3 |
POWER MOS 7 IGBT IGBT的功率MOS 7
|
Advanced Power Technology, Ltd.
|
APT40GP60B APT40GP60S |
POWER MOS 7 IGBT MOSFET
|
Advanced Power Technolo... Advanced Power Technology
|